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Specification parameters
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Technical parameters/rated voltage (DC):

55.0 V

Technical parameters/rated current:

85 A

Technical parameters/number of channels:

Technical parameters/drain source resistance:

11 mΩ

Technical parameters/polarity:

N-Channel

Technical parameters/dissipated power:

180 W

Technical parameters/product series:

IRF1010N

Technical parameters/Input capacitance:

3210pF @25V

Technical parameters/drain source voltage (Vds):

55 V

Technical parameters/Leakage source breakdown voltage:

55 V

Technical parameters/breakdown voltage of gate source:

±20.0 V

Technical parameters/Continuous drain current (Ids):

85.0 A

Technical parameters/rise time:

76 ns

Technical parameters/Input capacitance (Ciss):

3210pF @25V(Vds)

Technical parameters/rated power (Max):

180 W

Technical parameters/descent time:

48 ns

Technical parameters/operating temperature (Max):

175 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Encapsulation parameters/installation method:

Through Hole

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-220-3

Dimensions/Length:

10.66 mm

Dimensions/Width:

4.4 mm

Dimensions/Height:

16.51 mm

Dimensions/Packaging:

TO-220-3

Physical parameters/operating temperature:

-55℃ ~ 175℃

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tube

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643