Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 180 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 85A
Technical parameters/rise time: 76 ns
Technical parameters/Input capacitance (Ciss): 3210pF @25V(Vds)
Technical parameters/descent time: 48 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 180000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1010NPBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRF1010NPBF 晶体管, MOSFET, N沟道, 68 A, 55 V, 0.011 ohm, 10 V, 4 V
|
||
IRF1010NPBF
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IRF1010NPBF 晶体管, MOSFET, N沟道, 68 A, 55 V, 0.011 ohm, 10 V, 4 V
|
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