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Model SIR402DP-T1-GE3
Description MOSFET N-CH 30V 35A PPAK SO-8
Product QR code
Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method
Standard packaging quantity 1
6.21  yuan 6.21yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6603) Minimum order quantity(1)
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Technical parameters/dissipated power:

4.2W (Ta), 36W (Tc)

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Input capacitance (Ciss):

1700pF @15V(Vds)

 

Technical parameters/dissipated power (Max):

4.2W (Ta), 36W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SO-8

 

Dimensions/Packaging:

SO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7784DP-T1-GE3 SI7784DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
MOSFET N-CH 30V 35A PPAK SO-8
PDF
SI7784DP-T1-GE3 SI7784DP-T1-GE3 VISHAY 类似代替 SO-8
MOSFET N-CH 30V 35A PPAK SO-8
PDF
SI7784DP-T1-GE3 SI7784DP-T1-GE3 Vishay Semiconductor 类似代替 SOIC
MOSFET N-CH 30V 35A PPAK SO-8
PDF
SIR468DP-T1-GE3 SIR468DP-T1-GE3 VISHAY 类似代替 SOIC-8
MOSFET N-CH 30V 40A PPAK SO-8
PDF

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