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Model SI7784DP-T1-GE3
Description VISHAY SI7784DP-T1-GE3 Field effect transistor, MOSFET, N-channel, 30V, 35A, SOIC, whole coil
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method
Standard packaging quantity 1
9.43  yuan 9.43yuan
10+:
$ 11.3196
100+:
$ 10.7536
500+:
$ 10.3763
1000+:
$ 10.3574
2000+:
$ 10.2820
5000+:
$ 10.1876
7500+:
$ 10.1122
10000+:
$ 10.0744
Quantity
10+
100+
500+
1000+
2000+
Price
$11.3196
$10.7536
$10.3763
$10.3574
$10.2820
Price $ 11.3196 $ 10.7536 $ 10.3763 $ 10.3574 $ 10.2820
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4486) Minimum order quantity(10)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 8.2 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5 W

Technical parameters/threshold voltage: 2.5 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 35.0 A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR402DP-T1-GE3 SIR402DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
MOSFET N-CH 30V 35A PPAK SO-8
PDF
SIR468DP-T1-GE3 SIR468DP-T1-GE3 VISHAY 类似代替 SOIC-8
MOSFET N-CH 30V 40A PPAK SO-8
PDF

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