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Model SI7784DP-T1-GE3
Description MOSFET N-CH 30V 35A PPAK SO-8
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Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1374) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 5W (Ta), 27.7W (Tc)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 35.0 A

Technical parameters/Input capacitance (Ciss): 1600pF @15V(Vds)

Technical parameters/dissipated power (Max): 5W (Ta), 27.7W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 6.15 mm

External dimensions/width: 5.15 mm

External dimensions/height: 1.04 mm

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIR402DP-T1-GE3 SIR402DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
MOSFET N-CH 30V 35A PPAK SO-8
PDF
SIR468DP-T1-GE3 SIR468DP-T1-GE3 VISHAY 类似代替 SOIC-8
MOSFET N-CH 30V 40A PPAK SO-8
PDF

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