Technical parameters/rated voltage (DC): | -30.0 V |
|
Technical parameters/rated current: | -7.50 A |
|
Technical parameters/polarity: | P-CH |
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Technical parameters/dissipated power: | 2W (Ta) |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 7.50 A |
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Technical parameters/rise time: | 35.0 ns |
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Technical parameters/Input capacitance (Ciss): | 2900pF @10V(Vds) |
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Technical parameters/rated power (Max): | 2 W |
|
Technical parameters/dissipated power (Max): | 2W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOP-8 |
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Dimensions/Packaging: | SOP-8 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS9926A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS9926A 双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
|
||
NTMD4N03R2G
|
ON Semiconductor | 功能相似 | SOIC-8 |
N 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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