Technical parameters/frequency: | 30MHz ~ 175MHz |
|
Technical parameters/output power: | 150 W |
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Technical parameters/gain: | 13dB ~ 22dB |
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Technical parameters/test current: | 250 mA |
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Technical parameters/Input capacitance (Ciss): | 350pF @50V(Vds) |
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Technical parameters/dissipated power (Max): | 416000 mW |
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Technical parameters/rated voltage: | 125 V |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | P-244 |
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Dimensions/Packaging: | P-244 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF177
|
Ampleon USA | 功能相似 | 4 |
NXP BLF177 晶体管, 射频FET, 125 V, 16 A, 220 W, 1 MHz, 108 MHz
|
||
MRF150
|
M/A-Com | 功能相似 | 211-11 |
MOSFET晶体管 5-150MHz 150Watts 50Volt Gain 17dB
|
||
MRF151
|
Motorola | 功能相似 | 211-11 |
射频功率场效应晶体管150 W, 50 V, 175 MHz的N沟道MOSFET宽带 RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
|
||
MRF151
|
M/A-Com | 功能相似 | 211-11 |
射频功率场效应晶体管150 W, 50 V, 175 MHz的N沟道MOSFET宽带 RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
|
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