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Model MRF151

Description RF power field-effect transistor 150 W, 50 V, 175 MHz N-channel MOSFET broadband RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Brand: M/A-Com

Packaging 211-11

Delivery time

Packaging method Tray

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(6199) Minimum order quantity(1)

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Technical parameters/frequency:	175 MHz
Technical parameters/rated current:	16 A
Technical parameters/dissipated power:	300 W
Technical parameters/threshold voltage:	3 V
Technical parameters/Leakage source breakdown voltage:	125 V
Technical parameters/output power:	150 W
Technical parameters/gain:	13dB ~ 22dB
Technical parameters/test current:	250 mA
Technical parameters/Input capacitance (Ciss):	350pF @50V(Vds)
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	65 ℃
Technical parameters/dissipated power (Max):	300000 mW
Technical parameters/rated voltage:	125 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	211-11
Dimensions/Packaging:	211-11
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tray
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs Information/Hong Kong Import and Export License:	NLR

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