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Model MRF150
Description MOSFETTransistor 5-150MHz 150Watts 50Volt Gain 17dB
Product QR code
Brand: M/A-Com
Packaging 211-11
Delivery time
Packaging method Tray
Standard packaging quantity 1
582.92  yuan 582.92yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3629) Minimum order quantity(1)
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Technical parameters/frequency:

30MHz ~ 150MHz

 

Technical parameters/rated current:

16 A

 

Technical parameters/dissipated power:

300000 mW

 

Technical parameters/Leakage source breakdown voltage:

125V (min)

 

Technical parameters/output power:

150 W

 

Technical parameters/gain:

8dB ~ 17dB

 

Technical parameters/test current:

250 mA

 

Technical parameters/Input capacitance (Ciss):

400pF @50V(Vds)

 

Technical parameters/dissipated power (Max):

300000 mW

 

Technical parameters/rated voltage:

125 V

 

Encapsulation parameters/installation method:

Flange

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

211-11

 

Dimensions/Packaging:

211-11

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tray

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standards/ELV standards:

Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF151 MRF151 Motorola 类似代替 211-11
射频功率场效应晶体管150 W， 50 V， 175 MHz的N沟道MOSFET宽带 RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
PDF
MRF151 MRF151 M/A-Com 类似代替 211-11
射频功率场效应晶体管150 W， 50 V， 175 MHz的N沟道MOSFET宽带 RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
PDF
MRF151A MRF151A M/A-Com 功能相似 P-244
射频MOSFET行射频功率场效应晶体管N沟道增强型MOSFET The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET
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SD2931-10 SD2931-10 ETC1 功能相似
射频功率晶体管HF / VHF / UHF N沟道MOSFET RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
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