Technical parameters/polarity: | N-CH |
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Technical parameters/drain source voltage (Vds): | 50 V |
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Technical parameters/Continuous drain current (Ids): | 14A |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | DPAK |
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Dimensions/Packaging: | DPAK |
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Other/Product Lifecycle: | Obsolete |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | TO-252 |
ON Semiconductor Si N沟道 MOSFET RFD14N05LSM, 14 A, Vds=50 V, 3引脚 DPAK (TO-252)封装
|
||
RFD14N05LSM
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON Semiconductor Si N沟道 MOSFET RFD14N05LSM, 14 A, Vds=50 V, 3引脚 DPAK (TO-252)封装
|
||
RFD14N05LSM
|
Fairchild | 功能相似 | TO-252-3 |
ON Semiconductor Si N沟道 MOSFET RFD14N05LSM, 14 A, Vds=50 V, 3引脚 DPAK (TO-252)封装
|
||
RFD14N05LSM9A
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON Semiconductor Si N沟道 MOSFET RFD14N05LSM9A, 14 A, Vds=50 V, 3引脚 DPAK (TO-252)封装
|
||
|
|
Rochester | 功能相似 | TO-252 |
ON Semiconductor Si N沟道 MOSFET RFD14N05LSM9A, 14 A, Vds=50 V, 3引脚 DPAK (TO-252)封装
|
||
STD16NE06L
|
ST Microelectronics | 功能相似 | DPAK |
N - CHANNEL 60V - 0.07欧姆 - 16A - DPAK封装的STripFET功率MOSFET N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET
|
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