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Model RFD14N05LSM

Description N Channel MOSFET, Fairchild Semiconductor Enhanced Mode Field Effect Transistor (FET) is produced using Fairchild's patented high-density DMOS technology. This high-density process design is used to minimize on state resistance, provide durable and reliable performance, and enable fast switching. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.

Brand: Fairchild

Packaging TO-252-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

5+:

$ 3.9677

25+:

$ 3.6738

50+:

$ 3.4680

100+:

$ 3.3799

500+:

$ 3.3211

2500+:

$ 3.2476

5000+:

$ 3.2182

10000+:

$ 3.1741

Price	$ 3.9677	$ 3.6738	$ 3.4680	$ 3.3799	$ 3.3211
Start batch production	5+	25+	50+	100+	500+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(7342) Minimum order quantity(5)

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Technical parameters/rated voltage (DC): 50.0 V

Technical parameters/rated current: 14.0 A

Technical parameters/rated power: 14 W

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 100 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 48 W

Technical parameters/threshold voltage: 2 V

Technical parameters/input capacitance: 670 pF

Technical parameters/gate charge: 40.0 nC

Technical parameters/drain source voltage (Vds): 50 V

Technical parameters/leakage source breakdown voltage: 50.0 V

Technical parameters/breakdown voltage of gate source: ±10.0 V

Technical parameters/Continuous drain current (Ids): 14.0 A

Technical parameters/rise time: 24 ns

Technical parameters/Input capacitance (Ciss): 670pF @25V(Vds)

Technical parameters/rated power (Max): 48 W

Technical parameters/descent time: 16 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 48 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.39 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

Customs information/ECCN code: EAR99

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