Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Packaging: | TO-252 |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR3105PBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRLR3105PBF 晶体管, MOSFET, N沟道, 25 A, 55 V, 37 mohm, 10 V, 3 V
|
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NTD3055L104T4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR NTD3055L104T4G 晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
|
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|
|
Intersil | 功能相似 |
14A ， 50V ， 0.100欧姆，逻辑电平， N沟道功率MOSFET 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
|
|||
RFD14N05L
|
ON Semiconductor | 功能相似 | TO-251-3 |
14A ， 50V ， 0.100欧姆，逻辑电平， N沟道功率MOSFET 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
|
||
RFD14N05LSM9A
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON Semiconductor Si N沟道 MOSFET RFD14N05LSM9A, 14 A, Vds=50 V, 3引脚 DPAK (TO-252)封装
|
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|
|
Rochester | 类似代替 | TO-252 |
ON Semiconductor Si N沟道 MOSFET RFD14N05LSM9A, 14 A, Vds=50 V, 3引脚 DPAK (TO-252)封装
|
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STD16NE06L
|
ST Microelectronics | 功能相似 | DPAK |
N - CHANNEL 60V - 0.07欧姆 - 16A - DPAK封装的STripFET功率MOSFET N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET
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