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Model RDN100N20

Description Switching (200V, 10A)

Brand: ROHM Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Bulk

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	200 V
Technical parameters/rated current:	10.0 A
Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	360 mΩ
Technical parameters/dissipated power:	35 W
Technical parameters/drain source voltage (Vds):	200 V
Technical parameters/Leakage source breakdown voltage:	200 V
Technical parameters/Continuous drain current (Ids):	15.0 A
Technical parameters/rise time:	29 ns
Technical parameters/Input capacitance (Ciss):	543pF @10V(Vds)
Technical parameters/rated power (Max):	35 W
Technical parameters/descent time:	26 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	35W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10 mm
Dimensions/Width:	4.5 mm
Dimensions/Height:	8 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Obsolete
Other/Packaging Methods:	Bulk
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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