Technical parameters/dissipated power: 74W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Input capacitance (Ciss): 1100pF @25V(Vds)
Technical parameters/rated power (Max): 74 W
Technical parameters/dissipated power (Max): 74W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RDN100N20
|
ROHM Semiconductor | 功能相似 | TO-220-3 |
开关( 200V , 10A ) Switching (200V, 10A)
|
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