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Model IRL630PBF
Description Infineon Technologies IRL630PBF, MOSFET N channel 200V
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Brand: Infineon
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Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1288) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 200 V

Technical parameters/rated current: 9.00 A

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 74.0 W

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/leakage source breakdown voltage: 200 V

Technical parameters/Continuous drain current (Ids): 9.00 A

Technical parameters/rise time: 57.0 ns

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RDN100N20 RDN100N20 ROHM Semiconductor 功能相似 TO-220-3
开关（ 200V ， 10A ） Switching (200V, 10A)
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