Technical parameters/dissipated power: | 0.3 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @5mA, 5V |
|
Technical parameters/rated power (Max): | 300 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-363-6 |
|
Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-363-6 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Computers and computer peripherals, automation and process control, power management, industrial, automotive applications |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 完全替代 |
NXP PUMH9 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
|||
PUMH9
|
Philips | 完全替代 | SOT-363 |
NXP PUMH9 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMH9
|
NXP | 完全替代 | SOT-363 |
NXP PUMH9 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMH9,115
|
Nexperia | 功能相似 | SOT-363-6 |
NXP PUMH9,115 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMH9,115
|
NXP | 功能相似 | SOT-363-6 |
NXP PUMH9,115 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMH9,135
|
NXP | 类似代替 | SOT-363-6 |
TSSOP NPN 50V 100mA
|
||
PUMH9,165
|
Nexperia | 类似代替 | SOT-363-6 |
TSSOP NPN 50V 100mA
|
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