Technical parameters/polarity: NPN
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @5mA, 5V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363-6
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PUMH9,115
|
Nexperia | 类似代替 | SOT-363-6 |
NXP PUMH9,115 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMH9,115
|
NXP | 类似代替 | SOT-363-6 |
NXP PUMH9,115 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMH9,165
|
Nexperia | 完全替代 | SOT-363-6 |
TSSOP NPN 50V 100mA
|
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