Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/minimum current amplification factor (hFE): | 100 |
|
Technical parameters/DC current gain (hFE): | 100 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-363 |
|
Dimensions/Packaging: | SOT-363 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PUMH9,115
|
Nexperia | 完全替代 | SOT-363-6 |
NXP PUMH9,115 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMH9,115
|
NXP | 完全替代 | SOT-363-6 |
NXP PUMH9,115 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
PUMH9,135
|
NXP | 功能相似 | SOT-363-6 |
TSSOP NPN 50V 100mA
|
||
PUMH9,165
|
Nexperia | 功能相似 | SOT-363-6 |
TSSOP NPN 50V 100mA
|
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