Technical parameters/polarity: | N-Channel |
|
Technical parameters/drain source voltage (Vds): | 30.0 V |
|
Technical parameters/Continuous drain current (Ids): | 91.0 A |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | LFPAK |
|
Dimensions/Packaging: | LFPAK |
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Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HAT2168H-EL-E
|
Renesas Electronics | 功能相似 | SOT-669 |
硅N通道功率MOS FET电源开关 Silicon N Channel Power MOS FET Power Switching
|
||
RJK0305DPB-00#J0
|
Renesas Electronics | 功能相似 | SOT-669 |
Trans MOSFET N-CH 30V 30A 5Pin(4+Tab) LFPAK T/R
|
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