Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 30.0 A
Technical parameters/dissipated power: 45 W
Technical parameters/input capacitance: 1.25 nF
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 30.0 A
Technical parameters/Input capacitance (Ciss): 1250pF @10V(Vds)
Technical parameters/rated power (Max): 45 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: SOT-669
External dimensions/packaging: SOT-669
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN2R0-30YL,115
|
NXP | 功能相似 | SOT-669 |
PSMN Series 30V 2mOhm 97W N-Channel Logic Level Mosfet SMT - SOT-669
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||
PSMN6R0-30YL,115
|
NXP | 功能相似 | SOT-669-4 |
N沟道,Vdss=30V,Idss=79A
|
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PSMN7R0-30YL,115
|
Nexperia | 功能相似 | SOT-669 |
Single N-Channel 30V 12.2mOhm 10NC 51W Silicon SMT Mosfet - LFPAK-4
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