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Model PSMN6R0-30YL,115
Description N沟道,Vdss=30V,Idss=79A
Product QR code
Brand: NXP
Packaging SOT-669-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.16  yuan 2.16yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5373) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

55 W

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

79.0 A

 

Technical parameters/Input capacitance (Ciss):

1425pF @12V(Vds)

 

Technical parameters/rated power (Max):

55 W

 

Technical parameters/dissipated power (Max):

55W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SOT-669-4

 

Dimensions/Width:

4.1 mm

 

Dimensions/Packaging:

SOT-669-4

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HAT2168H-EL-E HAT2168H-EL-E Renesas Electronics 功能相似 SOT-669
硅N通道功率MOS FET电源开关 Silicon N Channel Power MOS FET Power Switching
PDF
PSMN6R0-30YL,115 PSMN6R0-30YL,115 NXP 类似代替 SOT-669-4
晶体管, MOSFET, N沟道, 73 A, 30 V, 0.00426 ohm, 10 V, 1.7 V
PDF

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