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Model HAT2168H-EL-E

Description 硅N通道功率MOS FET电源开关 Silicon N Channel Power MOS FET Power Switching

Brand: Renesas Electronics

Packaging SOT-669

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	30.0 V
Technical parameters/rated current:	30.0 A
Technical parameters/dissipated power:	15W (Tc)
Technical parameters/Input capacitance:	5.18 nF
Technical parameters/gate charge:	33.0 nC
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	55.0 A
Technical parameters/rise time:	20 ns
Technical parameters/Input capacitance (Ciss):	1730pF @10V(Vds)
Technical parameters/rated power (Max):	15 W
Technical parameters/descent time:	4 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	15W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	5
Encapsulation parameters/Encapsulation:	SOT-669
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-669
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
HAT2168H	Renesas Electronics	类似代替	LFPAK	硅N通道功率MOS FET电源开关 Silicon N Channel Power MOS FET Power Switching	PDF
PSMN6R0-30YL,115	NXP	功能相似	SOT-669-4	N沟道,Vdss=30V,Idss=79A	PDF
PSMN7R0-30YL,115	Nexperia	功能相似	SOT-669	Single N-Channel 30V 12.2mOhm 10NC 51W Silicon SMT Mosfet - LFPAK-4	PDF