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Model HAT2168H
Description Silicon N Channel Power MOS FET Power Switching
Product QR code
Brand: Renesas Electronics
Packaging LFPAK
Delivery time
Packaging method Tape
Standard packaging quantity 1
2.37  yuan 2.37yuan
5+:
$ 3.2049
25+:
$ 2.9675
50+:
$ 2.8013
100+:
$ 2.7301
500+:
$ 2.6826
2500+:
$ 2.6233
5000+:
$ 2.5995
10000+:
$ 2.5639
Quantity
5+
25+
50+
100+
500+
Price
$3.2049
$2.9675
$2.8013
$2.7301
$2.6826
Price $ 3.2049 $ 2.9675 $ 2.8013 $ 2.7301 $ 2.6826
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9722) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 30.0 V

Technical parameters/rated current: 30.0 A

Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 30.0 V

Technical parameters/Continuous drain current (Ids): 30.0 A

Technical parameters/rise time: 20 ns

Technical parameters/Input capacitance (Ciss): 1730pF @10V(Vds)

Technical parameters/descent time: 4 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 5

Encapsulation parameters/Encapsulation: LFPAK

External dimensions/packaging: LFPAK

Physical parameters/materials: Silicon

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDS7096N3 FDS7096N3 Fairchild 功能相似 SOIC-8
30V N沟道PowerTrench MOSFET的 30V N-Channel PowerTrench MOSFET
HAT2168H-EL-E HAT2168H-EL-E Renesas Electronics 类似代替 SOT-669
硅N通道功率MOS FET电源开关 Silicon N Channel Power MOS FET Power Switching
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