Technical parameters/rated voltage (DC): | -60.0 V |
|
Technical parameters/rated current: | -300 mA |
|
Technical parameters/polarity: | PNP, P-Channel |
|
Technical parameters/dissipated power: | 625 mW |
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Technical parameters/breakdown voltage (collector emitter): | 60.0 V |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-92 |
|
Dimensions/Packaging: | TO-92 |
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Other/Product Lifecycle: | End of Life |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6426
|
NTE Electronics | 功能相似 | TO-92 |
NPN达林顿晶体管 NPN Darlington Transistor
|
||
|
|
Motorola | 功能相似 | TO-92 |
NPN达林顿晶体管 NPN Darlington Transistor
|
||
2N6426
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN达林顿晶体管 NPN Darlington Transistor
|
||
2N6426
|
Central Semiconductor | 功能相似 | TO-226-3 |
NPN达林顿晶体管 NPN Darlington Transistor
|
||
2N6426
|
ROHM Semiconductor | 功能相似 |
NPN达林顿晶体管 NPN Darlington Transistor
|
|||
2N6426
|
Freescale | 功能相似 | TO-92 |
NPN达林顿晶体管 NPN Darlington Transistor
|
||
|
2N6426
|
HGF | 功能相似 | TO-92 |
NPN达林顿晶体管 NPN Darlington Transistor
|
||
|
2N6426
|
Rochester | 功能相似 | TO-92 |
NPN达林顿晶体管 NPN Darlington Transistor
|
||
|
|
ON Semiconductor | 类似代替 | TO-92 |
30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
||
|
|
ETC | 类似代替 |
30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
|||
BC557ATA
|
Fairchild | 功能相似 | TO-92-3 |
ON Semiconductor BC557ATA , PNP 晶体管, 100 mA, Vce=45 V, HFE:110, 10 MHz, 3引脚 TO-92封装
|
||
PN2907ABU
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR PN2907ABU 单晶体管 双极, PNP, -60 V, 200 MHz, 625 mW, -800 mA, 50 hFE
|
||
PN2907ABU
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR PN2907ABU 单晶体管 双极, PNP, -60 V, 200 MHz, 625 mW, -800 mA, 50 hFE
|
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