Technical parameters/frequency: | 200 MHz |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
|
Technical parameters/rated power (Max): | 625 mW |
|
Technical parameters/DC current gain (hFE): | 50 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 625 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Other/Manufacturing Applications: | Power Management, Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC33725TF
|
ON Semiconductor | 类似代替 | TO-226-3 |
TRANS NPN 45V 0.8A TO-92
|
||
BC33725TFR
|
Fairchild | 类似代替 | TO-92-3 |
ON Semiconductor BC33725TFR , NPN 晶体管, 800mA, Vce=50 V, HFE:100, 50 MHz, 3引脚 TO-92封装
|
||
BC33725TFR
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor BC33725TFR , NPN 晶体管, 800mA, Vce=50 V, HFE:100, 50 MHz, 3引脚 TO-92封装
|
||
PN2907ATA
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR PN2907ATA 单晶体管 双极, PNP, -60 V, 200 MHz, 625 mW, -800 mA, 50 hFE
|
||
PN2907ATF
|
Fairchild | 完全替代 | TO-226-3 |
ON Semiconductor PN2907ATF , PNP 晶体管, 800mA, Vce=60 V, HFE:100, 100 MHz, 3引脚 TO-92封装
|
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