Technical parameters/frequency: 100 MHz
Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 160 @100mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
ON Semiconductor | 类似代替 | CASE 29-11 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
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Motorola | 类似代替 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
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BC337-40
|
NXP | 类似代替 | TO-92-3 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
||
BC337-40
|
Allied Components | 类似代替 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
|||
BC33725TA
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor BC33725TA , NPN 晶体管, 800mA, Vce=45 V, HFE:100, 100 MHz, 3引脚 TO-92封装
|
||
BC33725TF
|
ON Semiconductor | 完全替代 | TO-226-3 |
TRANS NPN 45V 0.8A TO-92
|
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