Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 500 mA
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 30000 @100mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC557ATA
|
Fairchild | 功能相似 | TO-92-3 |
ON Semiconductor BC557ATA , PNP 晶体管, 100 mA, Vce=45 V, HFE:110, 10 MHz, 3引脚 TO-92封装
|
||
BC558A
|
Diotec Semiconductor | 功能相似 | TO-92 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC558A
|
Micro Electronics | 功能相似 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
|||
BC558A
|
General Semiconductor | 功能相似 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
|||
BC558A
|
ITT Corporation | 功能相似 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
|||
KSP27TA
|
ON Semiconductor | 功能相似 | TO-92 |
达林顿晶体管 Darlington Transistor
|
||
KSP27TA
|
Fairchild | 功能相似 | TO-226-3 |
达林顿晶体管 Darlington Transistor
|
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