Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/maximum current amplification factor (hFE): | 100 @150mA, 10V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/Encapsulation: | SOT-54-3 |
|
Dimensions/Length: | 4.8 mm |
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Dimensions/Width: | 4.2 mm |
|
Dimensions/Height: | 5.2 mm |
|
Dimensions/Packaging: | SOT-54-3 |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP2222ABU
|
Fairchild | 功能相似 | TO-92-3 |
NPN 晶体管，40V 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
KSP2222ABU
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN 晶体管，40V 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
PN2222A,116
|
NXP | 类似代替 | TO-92-3 |
SPT NPN 40V 0.6A
|
||
PN2222ABU
|
ON Semiconductor | 功能相似 | TO-226-3 |
ON Semiconductor PN2222ABU , NPN 晶体管, 1 A, Vce=40 V, HFE:35, 300 MHz, 3引脚 TO-92封装
|
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