Technical parameters/frequency: | 300 MHz |
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Technical parameters/number of pins: | 3 |
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Technical parameters/dissipated power: | 625 mW |
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Technical parameters/Input capacitance: | 25 pF |
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Technical parameters/rise time: | 25 ns |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
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Technical parameters/rated power (Max): | 625 mW |
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Technical parameters/DC current gain (hFE): | 35 |
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Technical parameters/descent time: | 60 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Length: | 5.2 mm |
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Dimensions/Width: | 4.19 mm |
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Dimensions/Height: | 5.33 mm |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bag |
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Other/Manufacturing Applications: | Power Management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PN2222AG
|
UTC | 完全替代 | TO-92 |
通用晶体管NPN硅 General Purpose Transistors NPN Silicon
|
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