Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 600 mA |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
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Technical parameters/rated power (Max): | 500 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSP2222ABU
|
Fairchild | 功能相似 | TO-92-3 |
NPN 晶体管，40V 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
KSP2222ABU
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN 晶体管，40V 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
PN2222A,116
|
NXP | 类似代替 | TO-92-3 |
SPT NPN 40V 0.6A
|
||
PN2222ABU
|
ON Semiconductor | 功能相似 | TO-226-3 |
ON Semiconductor PN2222ABU , NPN 晶体管, 1 A, Vce=40 V, HFE:35, 300 MHz, 3引脚 TO-92封装
|
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