Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.25 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 2 W |
|
Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Continuous drain current (Ids): | 1.90 A |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
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Other/Manufacturing Applications: | Industrial, Power Management |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML0100TRPBF
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON IRLML0100TRPBF 晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.178 ohm, 10 V, 2.5 V
|
||
IRLML0100TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML0100TRPBF 晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.178 ohm, 10 V, 2.5 V
|
||
PMV213SN,215
|
Nexperia | 功能相似 | SOT-23-3 |
N 通道 MOSFET，1A 至 9A，NXP Semiconductors ### MOSFET 晶体管，NXP Semiconductors
|
||
SI2328DS-T1-E3
|
Vishay Semiconductor | 功能相似 | SOT-23 |
VISHAY SI2328DS-T1-E3 晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
|
||
SI2328DS-T1-E3
|
VISHAY | 功能相似 | SOT-23-3 |
VISHAY SI2328DS-T1-E3 晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
|
||
SI2328DS-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY SI2328DS-T1-E3 晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
|
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