Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 250 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 730 mW
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 1.50 A, 1.15 A
Technical parameters/rise time: 11 ns
Technical parameters/rated power (Max): 730 mW
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 730 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.04 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1.02 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML0100TRPBF
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON IRLML0100TRPBF 晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.178 ohm, 10 V, 2.5 V
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IRLML0100TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML0100TRPBF 晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.178 ohm, 10 V, 2.5 V
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||
|
|
Philips | 功能相似 |
NXP PMV213SN 晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V
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PMV213SN
|
NXP | 功能相似 | SOT-23 |
NXP PMV213SN 晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V
|
||
SI2328DS-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY SI2328DS-T1-GE3 晶体管, MOSFET, N沟道, 1.5 A, 100 V, 195 mohm, 10 V, 4 V
|
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