SI2328DS-T1-E3 In Stock|PDF|Datasheet|Price|Agent[SI2328DS-T1-E3 Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Warm reminder: The pictures are for reference only. The actual product may vary

pk Collection Purchase of mobile phones

Model SI2328DS-T1-E3

Description VISHAY SI2328DS-T1-E3 晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V

Brand: Vishay Semiconductor

Packaging SOT-23

Delivery time

Packaging method Cut Tape (CT)

Standard packaging quantity 1

Add to Cart Buy now

Welcome to use ICGOODFIND AI Assistant

Chip AI consultant

Download related files

PDF

Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.25 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	730 mW
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Leakage source breakdown voltage:	100 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	1.50 A, 1.15 A
Technical parameters/rise time:	11 ns
Technical parameters/descent time:	10 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	0.73 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23
Dimensions/Length:	3.04 mm
Dimensions/Width:	1.4 mm
Dimensions/Height:	1.02 mm
Dimensions/Packaging:	SOT-23
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Packaging Methods:	Cut Tape (CT)
Other/Manufacturing Applications:	Power Management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRLML0100TRPBF	Infineon	功能相似	SOT-23-3	INFINEON IRLML0100TRPBF 晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.178 ohm, 10 V, 2.5 V	PDF
IRLML0100TRPBF	International Rectifier	功能相似	SOT-23-3	INFINEON IRLML0100TRPBF 晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.178 ohm, 10 V, 2.5 V	PDF
PMV213SN	Philips	功能相似		NXP PMV213SN 晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V	PDF
PMV213SN	NXP	功能相似	SOT-23	NXP PMV213SN 晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V	PDF
SI2328DS-T1-GE3	Vishay Siliconix	功能相似	SOT-23-3	VISHAY SI2328DS-T1-GE3 晶体管, MOSFET, N沟道, 1.5 A, 100 V, 195 mohm, 10 V, 4 V	PDF