Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/minimum current amplification factor (hFE): | 100 @50mA, 5V |
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Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PDTD123ET,215
|
NXP | 类似代替 | SOT-23-3 |
Nexperia PDTD123ET,215 NPN 数字晶体管, 500 mA, Vce=50 V, 2.2 kΩ, 电阻比:1, 3引脚 SOT-23 (TO-236AB)封装
|
||
PDTD123ET,215
|
Nexperia | 类似代替 | SOT-23-3 |
Nexperia PDTD123ET,215 NPN 数字晶体管, 500 mA, Vce=50 V, 2.2 kΩ, 电阻比:1, 3引脚 SOT-23 (TO-236AB)封装
|
||
|
|
NXP | 完全替代 | SOT-23-3 |
NPN 500毫安， 50 V电阻配备晶体管; R1 = 2.2千欧姆， R2 =开放 NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = open
|
||
PDTD123YT,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PDTD123YT,215 晶体管 双极预偏置/数字, BRT, 50 V, 500 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率, SOT-23
|
||
PDTD123YT,215
|
Nexperia | 类似代替 | SOT-23-3 |
NXP PDTD123YT,215 晶体管 双极预偏置/数字, BRT, 50 V, 500 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率, SOT-23
|
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