Technical parameters/polarity: | N-Channel, NPN |
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Technical parameters/dissipated power: | 0.25 W |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 500mA |
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Technical parameters/minimum current amplification factor (hFE): | 40 @50mA, 5V |
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Technical parameters/rated power (Max): | 250 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Power Management, Automotive, Industrial |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 类似代替 | SOT-23-3 |
NPN 500毫安， 50 V电阻配备晶体管; R1 = 2.2千欧姆， R2 =开放 NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = open
|
||
PDTD123TT,215
|
NXP | 类似代替 | SOT-23-3 |
PDTD123T_SER - NPN 500 mA、50 V配电阻晶体管；R1 = 2.2 kOhm，R2 = 开路
|
||
PDTD123TT,215
|
Nexperia | 类似代替 | SOT-23-3 |
PDTD123T_SER - NPN 500 mA、50 V配电阻晶体管；R1 = 2.2 kOhm，R2 = 开路
|
||
PDTD123YT,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PDTD123YT,215 晶体管 双极预偏置/数字, BRT, 50 V, 500 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率, SOT-23
|
||
PDTD123YT,215
|
Nexperia | 类似代替 | SOT-23-3 |
NXP PDTD123YT,215 晶体管 双极预偏置/数字, BRT, 50 V, 500 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率, SOT-23
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