Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 40 @50mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive, industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 类似代替 | SOT-23-3 |
NPN 500毫安， 50 V电阻配备晶体管; R1 = 2.2千欧姆， R2 =开放 NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = open
|
||
PDTD123TT,215
|
NXP | 类似代替 | SOT-23-3 |
PDTD123T_SER - NPN 500 mA、50 V配电阻晶体管；R1 = 2.2 kOhm，R2 = 开路
|
||
PDTD123TT,215
|
Nexperia | 类似代替 | SOT-23-3 |
PDTD123T_SER - NPN 500 mA、50 V配电阻晶体管；R1 = 2.2 kOhm，R2 = 开路
|
||
PDTD123YT,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PDTD123YT,215 晶体管 双极预偏置/数字, BRT, 50 V, 500 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率, SOT-23
|
||
PDTD123YT,215
|
Nexperia | 类似代替 | SOT-23-3 |
NXP PDTD123YT,215 晶体管 双极预偏置/数字, BRT, 50 V, 500 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率, SOT-23
|
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