Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/minimum current amplification factor (hFE): | 200 @1mA, 5V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJV4106RMTF
|
Fairchild | 功能相似 | SOT-23-3 |
特点•开关应用（偏置电阻内置）•开关电路，逆变器，接口电路，驱动器电路•内置偏置电阻（R1=10KΩ，R2=47KΩ）•到FJV3103R补
|
||
FJV4106RMTF
|
ON Semiconductor | 功能相似 | SOT-23-3 |
特点•开关应用（偏置电阻内置）•开关电路，逆变器，接口电路，驱动器电路•内置偏置电阻（R1=10KΩ，R2=47KΩ）•到FJV3103R补
|
||
MMUN2115LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 数字晶体管，On Semiconductor 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管，包含一个或两个集成电阻器。 单一系列输入电阻器，或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
|
||
PDTA114TT,215
|
NXP | 类似代替 | SOT-23-3 |
Nexperia PDTA114TT,215 PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:无, 3引脚 SOT-23 (TO-236AB)封装
|
||
PDTA114TT,215
|
Nexperia | 类似代替 | SOT-23-3 |
Nexperia PDTA114TT,215 PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:无, 3引脚 SOT-23 (TO-236AB)封装
|
||
UNR211500L
|
Panasonic | 功能相似 | SOT-23-3 |
Mini3-G1 PNP 50V 100mA
|
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