Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/halogen-free state: Halogen Free
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 246 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 160 @5mA, 10V
Technical parameters/rated power (Max): 400 mW
Technical parameters/DC current gain (hFE): 250
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.04 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1.01 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Automotive, Power Management, Automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUN2115T1G
|
ON Semiconductor | 类似代替 | SC-59-3 |
偏置电阻晶体管 Bias Resistor Transistors
|
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