Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 68 @5mA, 5V |
|
Technical parameters/rated power (Max): | 200 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/gain bandwidth: | 200 MHz |
|
Technical parameters/dissipated power (Max): | 200 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Height: | 0.93 mm |
|
Dimensions/Packaging: | SOT-23-3 |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMUN2111LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2111LT1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率, SOT-23
|
||
MMUN2114LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2114LT1G 晶体管 双极预偏置/数字, BRT, -50 V, -100 mA, 10 kohm, 47 kohm, 4.7 电阻比率, SOT-23
|
||
MUN2111T1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MUN2111T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率, SC-59
|
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