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Model PD55008S-E

Description RFPower transistor, LDMOST plastic series N-channel enhancement mode lateral MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Brand: ST Microelectronics

Packaging PowerSO-10

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(2265) Minimum order quantity(1)

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Technical parameters/frequency:	500 MHz
Technical parameters/rated voltage (DC):	40.0 V
Technical parameters/rated current:	4 A
Technical parameters/dissipated power:	52.8 W
Technical parameters/drain source voltage (Vds):	40.0 V
Technical parameters/Continuous drain current (Ids):	4.00 A
Technical parameters/output power:	8 W
Technical parameters/gain:	17 dB
Technical parameters/test current:	150 mA
Technical parameters/Input capacitance (Ciss):	58pF @12.5V(Vds)
Technical parameters/operating temperature (Max):	165 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	52800 mW
Technical parameters/rated voltage:	40 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	PowerSO-10
Dimensions/Length:	7.5 mm
Dimensions/Width:	9.4 mm
Dimensions/Height:	3.5 mm
Dimensions/Packaging:	PowerSO-10
Physical parameters/operating temperature:	-65℃ ~ 165℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

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