Technical parameters/frequency: 500 MHz
Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 4 A
Technical parameters/number of pins: 3
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 52.8 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/Continuous drain current (Ids): 4.00 A
Technical parameters/output power: 8 W
Technical parameters/gain: 17 dB
Technical parameters/test current: 150 mA
Technical parameters/Input capacitance (Ciss): 58pF @12.5V(Vds)
Technical parameters/operating temperature (Max): 165 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 52800 mW
Technical parameters/rated voltage: 40 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PowerSO-10RF
External dimensions/length: 9.5 mm
External dimensions/width: 9.4 mm
External dimensions/height: 3.5 mm
External dimensions/packaging: PowerSO-10RF
Physical parameters/operating temperature: -65℃ ~ 165℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PD55008S-E
|
ST Microelectronics | 类似代替 | PowerSO-10 |
RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
|
||
PD55008STR-E
|
ST Microelectronics | 完全替代 | PowerSO-10RF |
RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
|
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