Technical parameters/frequency: | 500 MHz |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 52.8 W |
|
Technical parameters/Leakage source breakdown voltage: | 40.0 V |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 4.00 A |
|
Technical parameters/output power: | 8 W |
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Technical parameters/gain: | 17 dB |
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Technical parameters/test current: | 150 mA |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/rated voltage: | 40 V |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | PowerSO-10 |
|
Dimensions/Length: | 7.5 mm |
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Dimensions/Width: | 9.4 mm |
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Dimensions/Height: | 3.5 mm |
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Dimensions/Packaging: | PowerSO-10 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PD55008-E
|
ST Microelectronics | 功能相似 | PowerSO-10RF |
MOSFET 晶体管，STMicroelectronics 射频晶体管为 LDMOS，适用于范围为 1 MHz 至 2 GHz 应用中的 L 频段卫星上行链路和 DMOS 功率晶体管。 ### MOSFET 晶体管，STMicroelectronics
|
||
PD55008S-E
|
ST Microelectronics | 类似代替 | PowerSO-10 |
RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
|
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