Technical parameters/number of pins: | 4 |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 700 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 150 V |
|
Technical parameters/Maximum allowable collector current: | 1A |
|
Technical parameters/DC current gain (hFE): | 250 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Packaging: | SOT-223 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Other/Manufacturing Applications: | Power Management, Industrial, Lighting, Communications & Networking, Motor Drive & Control, Automotive |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBHV8115T,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP PBHV8115T,215 单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE
|
||
PBHV8115T,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PBHV8115T,215 单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE
|
||
PBHV8115Z,115
|
Nexperia | 完全替代 | TO-261-4 |
NXP PBHV8115Z,115 单晶体管 双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
|
||
PBHV8115Z,115
|
NXP | 完全替代 | TO-261-4 |
NXP PBHV8115Z,115 单晶体管 双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review