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Model PBHV8115T,215

Description Single transistor bipolar, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE

Brand: Nexperia

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated power:	0.3 W
Technical parameters/number of pins:	3
Technical parameters/dissipated power:	300 mW
Technical parameters/gain bandwidth product:	30 MHz
Technical parameters/breakdown voltage (collector emitter):	150 V
Technical parameters/minimum current amplification factor (hFE):	50 @500mA, 10V
Technical parameters/rated power (Max):	300 mW
Technical parameters/DC current gain (hFE):	250
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	300 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	3 mm
Dimensions/Width:	1.4 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Industrial, lighting, motor drive and control, power management, automotive use
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	lead-free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
PBHV8115T,215	Nexperia	功能相似	SOT-23-3	单晶体管双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE	PDF
PBHV8115T,215	NXP	功能相似	SOT-23-3	单晶体管双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE	PDF
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PBHV8115Z,115	NXP	功能相似	TO-261-4	NXP PBHV8115Z,115 单晶体管双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE	PDF