Technical parameters/number of pins: | 4 |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 700 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 150 V |
|
Technical parameters/Maximum allowable collector current: | 1A |
|
Technical parameters/minimum current amplification factor (hFE): | 50 @500mA, 10V |
|
Technical parameters/maximum current amplification factor (hFE): | 100 @50mA, 10V |
|
Technical parameters/rated power (Max): | 1.4 W |
|
Technical parameters/DC current gain (hFE): | 250 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/dissipated power (Max): | 1400 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Packaging: | TO-261-4 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX79-C5V1,133
|
Nexperia | 功能相似 | DO-35-2 |
单管二极管 齐纳, 5.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
PBHV8115T,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP PBHV8115T,215 单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE
|
||
PBHV8115T,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PBHV8115T,215 单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE
|
||
PBHV8115Z
|
NXP | 完全替代 | SOT-223 |
NXP PBHV8115Z 单晶体管 双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
|
||
PBHV8115Z,115
|
Nexperia | 功能相似 | TO-261-4 |
单晶体管 双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
|
||
PBHV8115Z,115
|
NXP | 功能相似 | TO-261-4 |
单晶体管 双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
|
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