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Model PBHV8118T
Description Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia
Product QR code
Brand: Nexperia
Packaging SOT-23
Delivery time
Packaging method
Standard packaging quantity 1
1  yuan 1yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7902) Minimum order quantity(1)
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Technical parameters/minimum current amplification factor (hFE):

100

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

300 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23

 

Dimensions/Length:

3 mm

 

Dimensions/Width:

1.4 mm

 

Dimensions/Height:

1.1 mm

 

Dimensions/Packaging:

SOT-23

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBHV8115T,215 PBHV8115T,215 Nexperia 功能相似 SOT-23-3
NXP PBHV8115T,215 单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE
PDF
PBHV8115T,215 PBHV8115T,215 NXP 功能相似 SOT-23-3
NXP PBHV8115T,215 单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE
PDF
PBHV8115Z,115 PBHV8115Z,115 Nexperia 功能相似 TO-261-4
NXP PBHV8115Z,115 单晶体管 双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
PDF
PBHV8115Z,115 PBHV8115Z,115 NXP 功能相似 TO-261-4
NXP PBHV8115Z,115 单晶体管 双极, NPN, 150 V, 30 MHz, 700 mW, 1 A, 250 hFE
PDF

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