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Model FQP8N80C
Description FAIRCHILD SEMICONDUCTOR FQP8N80C Power Field Effect Transistor, MOSFET, N-channel, 8 A, 800 V, 1.29 ohm, 10 V, 5 V
Product QR code
Brand: Fairchild
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
6.08  yuan 6.08yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9764) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

800 V

 

Technical parameters/rated current:

8.00 A

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

1.29 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

178 W

 

Technical parameters/threshold voltage:

5 V

 

Technical parameters/drain source voltage (Vds):

800 V

 

Technical parameters/Leakage source breakdown voltage:

800 V

 

Technical parameters/breakdown voltage of gate source:

±30.0 V

 

Technical parameters/Continuous drain current (Ids):

8.00 A

 

Technical parameters/rise time:

110 ns

 

Technical parameters/Input capacitance (Ciss):

2050pF @25V(Vds)

 

Technical parameters/rated power (Max):

178 W

 

Technical parameters/descent time:

70 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

178W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.1 mm

 

Dimensions/Width:

4.7 mm

 

Dimensions/Height:

9.4 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant w

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