Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.265 Ω |
|
Technical parameters/dissipated power: | 235 W |
|
Technical parameters/threshold voltage: | 5 V |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/rise time: | 165 ns |
|
Technical parameters/Input capacitance (Ciss): | 2860pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 235 W |
|
Technical parameters/descent time: | 90 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 235000 mW |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Packaging: | TO-220-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Rail, Tube |
|
Other/Manufacturing Applications: | Lighting, power management |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQP33N10
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQP33N10, 33 A, Vds=100 V, 3引脚 TO-220AB封装
|
||
FQP33N10
|
Rochester | 类似代替 | TO-220 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQP33N10, 33 A, Vds=100 V, 3引脚 TO-220AB封装
|
||
FQP8N80C
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQP8N80C, 8 A, Vds=800 V, 3引脚 TO-220AB封装
|
||
FQP8N80C
|
Fairchild | 类似代替 | TO-220-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQP8N80C, 8 A, Vds=800 V, 3引脚 TO-220AB封装
|
||
FQP8N80C
|
Freescale | 类似代替 | TO-220-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQP8N80C, 8 A, Vds=800 V, 3引脚 TO-220AB封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review