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Model FQP8N80C

Description ON Semiconductor QFET 系列 Si N沟道 MOSFET FQP8N80C, 8 A, Vds=800 V, 3引脚 TO-220AB封装

Brand: ON Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Rail, Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	1.29 Ω
Technical parameters/dissipated power:	178 W
Technical parameters/threshold voltage:	5 V
Technical parameters/Input capacitance:	1580 pF
Technical parameters/drain source voltage (Vds):	800 V
Technical parameters/rise time:	110 ns
Technical parameters/Input capacitance (Ciss):	1580pF @25V(Vds)
Technical parameters/rated power (Max):	178 W
Technical parameters/descent time:	70 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	178000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.1 mm
Dimensions/Width:	4.7 mm
Dimensions/Height:	9.4 mm
Dimensions/Packaging:	TO-220-3
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Rail, Tube
Other/Manufacturing Applications:	Industrial, lighting, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Lead Free

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