Technical parameters/rated voltage (DC): | 60.0 V |
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Technical parameters/rated current: | 30.0 A |
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Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 46 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 88.2 W |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60 V |
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Technical parameters/breakdown voltage of gate source: | ±15.0 V |
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Technical parameters/Continuous drain current (Ids): | 30.0 A |
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Technical parameters/rise time: | 200 ns |
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Technical parameters/Input capacitance (Ciss): | 1150pF @25V(Vds) |
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Technical parameters/descent time: | 62 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 88.2W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 10.29 mm |
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Dimensions/Width: | 9.65 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB18N06LT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
15A,60V功率MOSFET
|
||
NTB25P06G
|
ON Semiconductor | 类似代替 | TO-263-3 |
-60V,-27.5A功率MOSFET
|
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